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Proceedings Paper

Performance evaluation of photoreceivers with MSM detectors integrated with HEMTs and HBTs
Author(s): N. R. Das; P. K. Basu
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Paper Abstract

The proposed development of fibre-optic communication links at bit rates exceeding 10Gb/s places a demand for photoreceiveis with high bandwidth (BW). Metal-Semiconductor-Metal (MSM) photodetectors (PDs) show very high intrinsic bandwidth (500GHz), are easily integrable with High Electron Mobility Transistors (HEMTs) and HeteroBipolar Transistors (HBTs) and are very attractive for communication and chip-to-chip interconnections. Widespread interest is being shown to these photoreceivers and to optimize their performance. In this paper we have calculated the gain, BW and minimum detectable optical power of a combination of MSM-PD and a HEMT and of a MSM-PD and a HBT and made a comparison. The InGaAs-InP heterojunctions and quantum wells are in the heart of file devices. The intrinsic capacitance of MSM-PD is made very low (6fF). The HEMT or HBT is used in common source (emitter) and cascode configurations. The minimum detectable power is calculated for direct intensity modulation with NRZ coding. Typical values ofPmin for MSM-PD and HEMT combination are -35dBm for 0. 1Gb/s, -30dBm for lGb/s and - 25dBm for 10 Gb/s. Due to less gate current noise this combination gives a better performance than a MSM-PD and HBT combination. However, with inclusion of proper model of gate current noise, there is some degradation of performance. Some possible means to optimize the performance are discussed in this paper.

Paper Details

Date Published: 2 January 1998
PDF: 6 pages
Proc. SPIE 3211, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96, (2 January 1998); doi: 10.1117/12.345590
Show Author Affiliations
N. R. Das, Univ. of Calcutta (India)
P. K. Basu, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 3211:
International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96
J. P. Raina; P. R. Vaya, Editor(s)

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