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Proceedings Paper

Semiconductor laser diode array characterization by means of field intensity measurements
Author(s): Luigi Zeni; Antonello Cutolo; Rocco Pierri
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Paper Abstract

Semiconductor laser diode arrays are becoming a widespread source for a large variety of applications, ranging from telecommunications to industry. In particular, the availability of low-cost high-power laser diode arrays makes it possible their use in industrial context for material cutting, welding, diagnostics and processing. In the above applications the exact control of the beam quality plays a very important role because it directly affects the reliability of the final result. We have developed a characterization technique which, starting from total intensity measurements on planes orthogonal to the beam propagation path, is able to deduce the working conditions of each laser setting up the array. The importance of this approach is twofold. First it allows a non destructive quality control on ready-to-use laser arrays; second it may represent a powerful tool for the detection of design problems in the array itself and in the bias circuitry as well. The problem is formulated as an inverse one and the solution is found by minimizing a proper functional. Several numerical experiments have been performed and the results clearly indicate the ability of the proposed approach tin identifying specific failures in a laser diode array, such as single element power drop.

Paper Details

Date Published: 14 April 1999
PDF: 9 pages
Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, (14 April 1999); doi: 10.1117/12.345427
Show Author Affiliations
Luigi Zeni, Seconda Univ. degli Studi di Napoli (Italy)
Antonello Cutolo, Univ. degli Studi di Napoli Federico II (Italy)
Rocco Pierri, Seconda Univ. degli Studi di Napoli (Italy)

Published in SPIE Proceedings Vol. 3626:
Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV
Mahmoud Fallahi; S. C. Wang; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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