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Proceedings Paper

Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays
Author(s): Jens Wolfgang Tomm; Ralf Mueller; A. Baerwolff; M. Neuner; Thomas Elsaesser; Dirk Lorenzen; Franz X. Daiminger; A. Gerhardt; J. Donecker
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Paper Abstract

High-power diode lasers such as `cm-bar arrays' are important for many applications. The `p-side down packaging', i.e. the direct mounting of the epitaxial layer sequence on a heat spreader ensures sufficient thermal properties, however, in such a geometry, additional mechanical strain of the active region represents a central issue, affecting both the laser parameter as well as lifetime and reliability of the device. Thermally induced strain caused by device packaging is studied in high-power semiconductor laser arrays by a novel non-invasive technique. Photocurrent measurements with intentionally strained laser array devices for 808 nm emission reveal spectral shifts of all allowed optical transitions in the active region. These shifts serve as a measure for strain and are compared with model calculations. Depending on the specific heat spreader materials we find compressive or tensile mounting induced strain contributions. For a given packaging architecture, about one quarter of the mounting induced strain is transferred to the quantum well region of the device. Spatially resolved measurements allow to measure lateral strain gradients in the devices. Using this data for calibration we show that polarization resolved electroluminescence scans can be used as convenient measure for strain homogeneity test also in quantum-well devices.

Paper Details

Date Published: 14 April 1999
PDF: 10 pages
Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, (14 April 1999); doi: 10.1117/12.345424
Show Author Affiliations
Jens Wolfgang Tomm, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Ralf Mueller, Max-Born-Institut fuer Nichtlineare Optik (Germany)
A. Baerwolff, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
M. Neuner, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Thomas Elsaesser, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Dirk Lorenzen, Jenoptik Laserdiode GmbH (Germany)
Franz X. Daiminger, Jenoptik Laserdiode GmbH (Germany)
A. Gerhardt, Institut fuer Kristallzuechtung (Germany)
J. Donecker, Institut fuer Kristallzuechtung (Germany)


Published in SPIE Proceedings Vol. 3626:
Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV
Mahmoud Fallahi; S. C. Wang; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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