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Proceedings Paper

Source wavelength dependence of modulation frequency responses of 1.55-um DFB LDs measured with active layer photomixing technique
Author(s): Ryosuke Goto; Ken-ichi Matsui; Masakazu Mori; Toshio Goto; Akira Miyauchi
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Paper Abstract

With the active layer photomixing technique, parasitic-free intrinsic modulation frequency responses of semiconductor laser diodes (LD's) can be measured. But the mechanism of the carrier density modulation, and consequently, the region where the carrier density is modulated, depends on the wavelengths of the injected beams. In this paper, the modulation frequency response of a 1.55 µ m distributed feedback LD has been measured with the active layer photomixing technique under two distinct conditions; one is the case when the carrier density is modulated by the band-band absorption, and the other by the stimulated emission. The measured modulation frequency responses are quite different from each other. Especially, the response at the relaxation oscillation frequency in the band-band absorption case is suppressed about 1 OdB compared with that in the stimulated emission one.

Paper Details

Date Published: 2 January 1998
PDF: 4 pages
Proc. SPIE 3211, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96, (2 January 1998); doi: 10.1117/12.345360
Show Author Affiliations
Ryosuke Goto, Nagoya University (Japan)
Ken-ichi Matsui, Nagoya University (Japan)
Masakazu Mori, Nagoya University (Japan)
Toshio Goto, Nagoya Univ. (Japan)
Akira Miyauchi, Fujitsu Ltd (Japan)

Published in SPIE Proceedings Vol. 3211:
International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96
J. P. Raina; P. R. Vaya, Editor(s)

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