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Proceedings Paper

Method of radical beam epitaxy
Author(s): Tamaz V. Butkhuzi; Nodar P. Kekelidze; Dimitri N. Peikrishvili; Ekaterine G. Chikoidze; Lia T. Trapaidze; Maia M. Sharvashidze
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Paper Abstract

On the base of the thermodynamical analyze of point defects concentration correlation an effective method to obtain intrinsic defective hole conductivity in wide-band-gap II-VI compounds (ZnS, ZnO, ZnSe) was suggested and performed. The method was called Radical Beam Epitaxy. The photoluminescence spectra and electrical properties of ZnS substrate crystal and epitaxial ZnO layers were investigated. The centers responsible for hole conductivity in ZnS samples have been identified.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344762
Show Author Affiliations
Tamaz V. Butkhuzi, Tbilisi State Univ. (Georgia)
Nodar P. Kekelidze, Tbilisi State Univ. (Georgia)
Dimitri N. Peikrishvili, Tbilisi State Univ. (Georgia)
Ekaterine G. Chikoidze, Tbilisi State Univ. (Georgia)
Lia T. Trapaidze, Tbilisi State Univ. (Georgia)
Maia M. Sharvashidze, Tbilisi State Univ. (Georgia)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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