Share Email Print
cover

Proceedings Paper

Growth mechanism of KAP crystals: surface morphology of the (010) face
Author(s): V. A. Kuznetsov; N. D. Samotoin; T. M. Okhrimenko; Miroslawa Rak
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The surface morphology of the (010) face of KAP crystals growth from aqueous solution at low supersaturations (0.03 divided by 0.04) was investigated by the optical and electron microscopy using the gold decoration technique. The variety of growth patterns has been revealed: macroscopic hillocks, shallow hillocks, microscopic hillocks and numerous 2D nuclei. The macroscopic hillocks and smaller polygonal hillocks are formed by a group of cooperating dislocations or by a single dislocation. The density of observed shallow hillocks is higher than the dislocation density. The results reveal that, at low supersaturations, growth of the (010) face occurs by combined spiral and 2D nucleation mechanisms. The influence of low concentrations of organic additives on surface morphology of the (010) face has also been studied. The additives stimulate 2D nucleation and they increase the spread velocity of steps. The growth promoting effect of impurities is discussed in terms of the above data.

Paper Details

Date Published: 8 April 1999
PDF: 10 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344760
Show Author Affiliations
V. A. Kuznetsov, Institute of Crystallography (Russia)
N. D. Samotoin, Institute of Ore Deposits Geology, Petrography, Mineralogy and Geochemistry (Russia)
T. M. Okhrimenko, Institute of Crystallography (Russia)
Miroslawa Rak, Technical Univ. of Lodz (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

© SPIE. Terms of Use
Back to Top