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Proceedings Paper

Spectral dependence of GaAlN bandgap-graded UV detector responsivity
Author(s): Michal Janusz Malachowski
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Paper Abstract

Calculation has been carried out on the responsivity of an AlxGa1-xN(n)-GaN(p) photodiode ultraviolet detector in which the AlxGa1-xN layer has an energy band-gap grading. The analytical solution to the 1D continuity equation was used in the calculations. The spatial dependence of the material properties, such as the absorption coefficient and the energy band-gap of the photodiode n-type laser was included in the solution. The effect of the n-type front layer thickness of the energy band-gap graded photodiodes on the responsivity was analyzed and compared to that of the ungraded photodiodes. Compared to the ungraded photodiodes an enhanced current responsivity was found along with a greatly reduced dependence on the graded layer thickness and on surface recombination rate.

Paper Details

Date Published: 8 April 1999
PDF: 8 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344758
Show Author Affiliations
Michal Janusz Malachowski, Military Univ. of Technology (Poland) and Pedagogical Univ. (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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