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Proceedings Paper

Surface properties of In(Sb,As)
Author(s): Waldemar Gawron; Jaroslaw Rutkowski; Jolanta Raczynska; Krzysztof Adamiec; Waldemar Larkowski
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Paper Abstract

The RF magnetron sputtering growth and characteristics of ZnS and SiO2 passivants on the surface of bulk n-type InAsSb have been reported. Our investigations include InAsSb surface preparation and in-situ pretreatment, deposition- induced surface damage, interface charge, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The effect of sputtering growth conditions parameters (deposition temperature, pressure of argon, and RF power) is also reported. The sputtered ZnS layers exhibit excellent dielectric, insulating and mechano-chemical, as well as interface properties. The interfaces characterized by slight accumulation and small (after preservation of the thin natural oxide) hystereses are demonstrated. The SiO2 layers have poor adherence and high density of pinholes. The samples with larger surface state densities have been observed.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344757
Show Author Affiliations
Waldemar Gawron, Military Univ. of Technology (Poland)
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Jolanta Raczynska, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Waldemar Larkowski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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