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Proceedings Paper

Gate-controlled narrow-bandgap photodiodes passivated with rf sputtered dielectrics
Author(s): Jaroslaw Rutkowski; Jakub Wenus; Waldemar Gawron; Krzysztof Adamiec
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Paper Abstract

Gate-controlled diodes were made by using evaporated indium electrodes overlapping the edge of mesa diodes, isolated from the surface by a layer of ZnS or by native anodic oxide of InSb or HgCdTe. The resulting 3D device characteristics with gate voltage as a parameter have been investigated. Relative spectral responses and I-V characteristics were measured at 77 K. The R0A product is used as an indicator of the dark current of photodiodes passivated with ZnS layer. A plot of R0A values versus gate potential shows that the optimum R0A values are obtained at small positive gate bias voltage. This dependence is consistent with surface recombination influencing the R0A product. The results of a 2D model for calculating gate-induce surface leakage currents due to band-to-band tunneling are presented. The exact quantitative comparison cannot be made between our results and theory, since the active tunneling area is not known.

Paper Details

Date Published: 8 April 1999
PDF: 6 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344756
Show Author Affiliations
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Jakub Wenus, Military Univ. of Technology (Poland)
Waldemar Gawron, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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