Share Email Print
cover

Proceedings Paper

Photosensitivity of graded-bandgap structures with interfacial recombination states
Author(s): Volodymyr G. Savitsky; Bogdan S. Sokolovsky; Volodymyr K. Pysarevsky
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Influence of interfacial recombination of charge carriers on photoconductivity of graded-band-gap semiconductor structures with extrinsic type of a conductivity and linear spatial dependence of band-gap is investigated theoretically. Effects of illumination of the structures from wide band gap side by strongly absorbed monochromatic light and by polychromatic light which uniformly generates photocarriers in the sample have been analyzed. Spectral dependences of the photoconductivity of the graded-band-gap semiconductor structures illuminated by monochromatic light are shown to have pronounced minimum occurring at photon energy equal to band-gap energy at the interface. Under conditions of coordinate-independent photocarrier generation rate the influence of interfacial recombination on the graded-band-gap semiconductor structure photosensitivity displays most substantially in the case when the sample thickness is of the order of minority carrier diffusion length.

Paper Details

Date Published: 8 April 1999
PDF: 6 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344755
Show Author Affiliations
Volodymyr G. Savitsky, Ivan Franko State Univ. of Lviv (Ukraine)
Bogdan S. Sokolovsky, Ivan Franko State Univ. of Lviv (Ukraine)
Volodymyr K. Pysarevsky, Ivan Franko State Univ. of Lviv (Ukraine)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

© SPIE. Terms of Use
Back to Top