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Proceedings Paper

Peculiarities of MCT ion etching in rf mercury glow discharge
Author(s): Volodymyr G. Savitsky; Leonid G. Mansurov; Igor M. Fodchuk; Igor I. Izhnin; Igor S. Virt; Mariya Lozynska; Andrij V. Evdokimenko
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Paper Abstract

Results of complex investigations of n- and p-type Hg1-xCdxTe (MCT) etching in RF mercury glow discharge have been presented. Discharge was induced in quasi-closed volume. Results of technology parameter influence onto velocity of etching have been presented. It has been shown that MCT treatment by mercury ions can be carried out with etching velocity up to 30 micrometers /hour. Surface heating under these conditions slightly increases the temperature (up to 50 degree(s)C) and stoichiometry deviations are absent. It has been found that the width of disturbed layer depends on bias voltage and is smaller than 2.5 micrometers . Electrophysical parameters of n- and p-type MCT after processing have been studied. Etching of n-MCT forms the n+-n structure. The width of n+-layer corresponds to the width of disturbed zone. In the case of p-MCT, there exists inversion of conductivity type at depths exceeding those corresponding to the case of argon ions etching. It is supposed that high inversion velocity is caused by saturation of MCT surface by mercury ions during treatment.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344754
Show Author Affiliations
Volodymyr G. Savitsky, Ivan Franko State Univ. of Lviv (Ukraine)
Leonid G. Mansurov, Ivan Franko State Univ. of Lviv (Ukraine)
Igor M. Fodchuk, Chernivtsy Fedkovich Univ. (Ukraine)
Igor I. Izhnin, Ivan Franko State Univ. of Lviv (Ukraine)
Igor S. Virt, Drogobych Franko Pedagogical Institute (Ukraine)
Mariya Lozynska, Ivan Franko State Univ. of Lviv (Ukraine)
Andrij V. Evdokimenko, Chernivtsy Fedkovich Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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