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Proceedings Paper

Temperature stability of p-n CdxHg1-xTe structures formed by ion beam milling
Author(s): Igor I. Izhnin; Aleksandr I. Izhnin; Kurban R. Kurbanov; Bogdan B. Prytuljak
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Paper Abstract

The influence of thermal annealing on electrical properties of p-n structures formed by ion beam milling (IBM) on vacancy doped CdxHg1-xTe (x equals 0.205) single crystals with p (77 K) equals 5.8(DOT)1015 cm-3 was investigated. After IBM of the initial samples the n-type layers were created with the thickness about 10 (mu) and electron concentration of the main part of n-type layers 5(DOT)1014 cm-3. P-n structures were annealed in air at 85, 120 and 160 degree(s)C during 1, 2, and 4 hours. Degradation of the p-n structure after every annealing step was estimated on changes of the Hall coefficient dependence of magnetic field. It was revealed that degradation of the p-n structure took place due to progressive thickness decreasing of n-layer through Hg passing to intersites and vacancy creation. The critical temperature during technology steps is equal about 100 degree(s)C.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344752
Show Author Affiliations
Igor I. Izhnin, Institute for Materials SRC Carat (Ukraine)
Aleksandr I. Izhnin, Institute for Materials SRC Carat (Ukraine)
Kurban R. Kurbanov, Institute for Materials SRC Carat (Ukraine)
Bogdan B. Prytuljak, Institute for Materials SRC Carat (Ukraine)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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