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Proceedings Paper

Carrier lifetime in Hg1-xCdxTe grown by molecular beam epitaxy
Author(s): Aleksander V. Voitsekhovskii; Yu. A. Denisov; Andrej P. Kokhanenko; N. A. Kulchitskii
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Paper Abstract

Carrier lifetimes in Hg1-xCdxTe (x equals 0.195 - 0.230) structures grown by molecular beam epitaxy are presented. The carrier lifetimes have been determined from photoconductivity decay after excitation with radiation pulse at various wavelength. It is clearly shown that borders of epitaxial layers influence their photoelectrical properties.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344750
Show Author Affiliations
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)
Yu. A. Denisov, Tomsk State Univ. (Russia)
Andrej P. Kokhanenko, Tomsk State Univ. (Russia)
N. A. Kulchitskii, Tomsk State Univ. (Russia)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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