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Proceedings Paper

Magnetron sputter epitaxy of n+-InSb on p-InSb for infrared photodiode applications
Author(s): Waldemar Gawron; Krzysztof Adamiec; Waldemar Larkowski
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Paper Abstract

Narrow gap intrinsic semiconductors, extrinsic semiconductors and low dimensional structures have been used for infrared applications. Here we propose indium antimonide for infrared photodetectors operating in the 3 - 5 micrometers wavelength range at 80 K. These high performance single or multi-element detectors are typically fabricated from bulk InSb, using processes in involving the diffusion of dopants to product the p+-n homojunctions. We present a new growth technique, RF magnetron sputter epitaxy, where indium and antimony are supplied from solid n-InSb sputter target. Using this technique we have deposited n+-type epilayers on p-type bulk InSb A 1 - 2 micrometers n+ InSb layer grown on p InSb at a growth temperature of 350 - 370 degree(s)C. The layers show excellent surface morphology and crystallinity. We have used these epilayers to fabricate homojunction infrared photodiodes. The spectral and I-V characteristics of this diode have been presented and compared with the more widely reported metallurgical diffused junctions. This is the first material quality obtained for InSb nucleated directly onto InSb by rf magnetron sputter epitaxy simultaneously formatting np junction reported to date.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344749
Show Author Affiliations
Waldemar Gawron, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Waldemar Larkowski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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