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Proceedings Paper

Novel far-infrared detectors for space applications
Author(s): A. G. Unil Perera; W. Z. Shen; Hui Chun Liu; Margaret Buchanan; William J. Schaff
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Paper Abstract

The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (> 40 micrometers ) detectors for space application is reported. The emphasis is placed on the detector performance, which includes responsivity, quantum efficiency, bias effects, cutoff wavelength, uniformity, crosstalk, and noise. The results are promising and show that p-GaAs HIWIP detectors have high potential to become a strong competitor in far- infrared space applications.

Paper Details

Date Published: 8 April 1999
PDF: 6 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344746
Show Author Affiliations
A. G. Unil Perera, Georgia State Univ. (United States)
W. Z. Shen, Georgia State Univ. (China)
Hui Chun Liu, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)
William J. Schaff, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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