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Proceedings Paper

Erbium photoluminescence in sol-gel-derived titanium dioxide films
Author(s): N. V. Gaponenko; O. V. Sergeev; Jan Misiewicz; Hubert Gnaser; R. Heiderhoff; R. M. Cramer; Ludwig J. Balk; A. Dunbar; B. Hamilton
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Paper Abstract

Titanium dioxide films doped with erbium were prepared by sol-gel technique from Ti(OC2H5)4 or Ti(OC4H9)4 precursors. Room-temperature luminescence at 1.53 micrometers associated with 4I13/2 - 4I15/2 transitions of Er3+ ions in TiO2 films derived from the first precursor has been detected. The films have a refractive index about 2.4 and may be used in the planar erbium doped waveguides.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344743
Show Author Affiliations
N. V. Gaponenko, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
O. V. Sergeev, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Hubert Gnaser, Univ. Kaiserslautern (Germany)
R. Heiderhoff, Bergische Univ.-Gesamthochschule Wuppertal (Germany)
R. M. Cramer, Bergische Univ.-Gesamthochschule Wuppertal (Germany)
Ludwig J. Balk, Bergische Univ.-Gesamthochschule Wuppertal (Germany)
A. Dunbar, Univ. of Manchester Institute of Science and Technology (United Kingdom)
B. Hamilton, Univ. of Manchester Institute of Science and Technology (United Kingdom)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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