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Proceedings Paper

Partially strained Si1-xGex/Si structures investigated by photoreflectance spectroscopy
Author(s): Piotr Sitarek; Jan Misiewicz; Krzysztof Nauka
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Paper Abstract

Partially strained Si1-xGex epilayers with germanium composition up to 25% have been studied by room temperature photoreflectance spectroscopy. Observed transitions were identified as E1 and E0' direct transitions at Si1-xGex structure. The E1 transition energy dependence on alloy composition shows that the studied Si1-xGex epilayers are partially relaxed and the degree of relaxation differ from one structure to another. For the germanium content close to 10% the crossing between E1 and E0' optical transitions was observed.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344737
Show Author Affiliations
Piotr Sitarek, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Krzysztof Nauka, Hewlett Packard Labs. (United States)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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