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Proceedings Paper

Electronic properties of grown-in defects in semi-insulating GaAs
Author(s): Roman Kozlowski; Michal Pawlowski; Pawel Kaminski; J. Cwirko
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Paper Abstract

Defect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy. A number of defect centers related to native defects and metallic impurities were detected and the concentrations of these centers were estimated.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344736
Show Author Affiliations
Roman Kozlowski, Institute of Electronic Materials Technology (Poland)
Michal Pawlowski, Military Univ. of Technology (Poland)
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)
J. Cwirko, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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