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Proceedings Paper

Photoreflectance investigations of AlxGa1-xAs/GaAs bandgap dependence on Al content
Author(s): Piotr Sitarek; Jan Misiewicz; Erling Veje
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Paper Abstract

The room temperature photoreflectance spectroscopy (PR) was used to investigate AlxGa1-xAs/GaAs structures. All structures were grown by molecular beam epitaxy technique. The aluminum content changes from x equals 0.11 to x equals 0.53. The alloy composition was determined from X-ray diffraction measurements. The dependence of the direct band gap energy on the Al content was under investigations. To obtain the direct band gap energy, the measured PR spectra were analyzed using Aspnes lineshape procedure. The determined Eg(AlGaAs) dependence on x for doped Al1-xGaxAs layers was compared to previous results.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344735
Show Author Affiliations
Piotr Sitarek, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Erling Veje, Univ. of Copenhagen (Denmark)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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