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Proceedings Paper

Photoreflectance study of coupling effects in double quantum wells
Author(s): G. Sek; K. Ryczko; M. Kubisa; Jan Misiewicz; J. Koeth; Alfred W. B. Forchel
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Paper Abstract

A double quantum well molecular beam epitaxy grown GaAs/AlxGa1-xAs structure was studied. To investigate the coupling effects in such a system 1 monolayer thick AlAs barrier was inserted at the center of the GaAs/AlxGa1-xAs single well. Due to the strong coupling between wells each confined state splits into two: symmetric and antisymmetric ones. In the room temperature photoreflectance spectrum features related to transitions between all these states were observed. Theoretical considerations based on the envelope function approximation were performed to obtain the energies of expected optical transitions. An excellent agreement between experiment and theory was obtained.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344734
Show Author Affiliations
G. Sek, Wroclaw Univ. of Technology (Poland)
K. Ryczko, Wroclaw Univ. of Technology (Poland)
M. Kubisa, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
J. Koeth, Univ. of Wuerzburg (Germany)
Alfred W. B. Forchel, Univ. of Wuerzburg (Germany)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

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