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Proceedings Paper

Simulation of the early stages of thermal SiO2 growth
Author(s): Kazimierz Jerzy Plucinski
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Paper Abstract

The kinetics of the silicon oxidation was analyzed based on the fractal mechanism of oxidation. The transport of the oxidants through consolidated region was solved based on continuous equation. Confirmation was made to some reported experimental observations.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344733
Show Author Affiliations
Kazimierz Jerzy Plucinski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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