Share Email Print
cover

Proceedings Paper

Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique
Author(s): Regina Paszkiewicz; Ryszard Korbutowicz; D. Radziewicz; Marek Panek; Bogdan Paszkiewicz; J. Kozlowski; Boguslaw Boratynski; Marek J. Tlaczala
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

AlxGa1-xN layers with 0.02 xGa1-xN layer grown on it were evaluated by high resolution X-ray measurements, their surface morphology was observed with SEM and Nomarski optical microscope. Electrical properties of the layers were determined by C-V measurements performed at 100 kHz and 1 MHz using mercury probes. The aluminum incorporation into the solid phase during the growth process has been studied. As a result high quality AlxGa1-xN/GaN layers for electronic application have been deposited.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344729
Show Author Affiliations
Regina Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Ryszard Korbutowicz, Wroclaw Univ. of Technology (Poland)
D. Radziewicz, Wroclaw Univ. of Technology (Poland)
Marek Panek, Wroclaw Univ. of Technology (Poland)
Bogdan Paszkiewicz, Wroclaw Univ. of Technology (Poland)
J. Kozlowski, Wroclaw Univ. of Technology (Poland)
Boguslaw Boratynski, Wroclaw Univ. of Technology (Poland)
Marek J. Tlaczala, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

© SPIE. Terms of Use
Back to Top