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Proceedings Paper

Optical studies of MOVPE-grown GaN layers
Author(s): Mariusz Ciorga; Krzysztof Jezierski; Leszek Bryja; Jan Misiewicz; Regina Paszkiewicz; Ryszard Korbutowicz; Marek Panek; Bogdan Paszkiewicz; Marek J. Tlaczala; Ib Trabjerg
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Paper Abstract

Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0 divided by 6 eV.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344728
Show Author Affiliations
Mariusz Ciorga, Wroclaw Univ. of Technology (Poland)
Krzysztof Jezierski, Wroclaw Univ. of Technology (Poland)
Leszek Bryja, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Regina Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Ryszard Korbutowicz, Wroclaw Univ. of Technology (Poland)
Marek Panek, Wroclaw Univ. of Technology (Poland)
Bogdan Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Marek J. Tlaczala, Wroclaw Univ. of Technology (Poland)
Ib Trabjerg, Univ. of Copenhagen (Denmark)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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