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Proceedings Paper

Electrical conductivity, ESR, and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method
Author(s): Waclaw Bala; Franciszek Rozploch; L. Falkowski; Slawomir Kulesza; G. Zabik; S. Plachetko; P. Borowski
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Paper Abstract

The electrical conductivity, thermally stimulated depolarization current as well as the current-voltage characteristics were measured from 77 K to 350 K. The obtained results are correlated with the Raman scattering spectroscopy and ESR space. In Al-Si-diamond layer-Al structures three (for B-doped diamond layers) or two (for no B-doped diamond layers) TSC peaks in the temperature range between 100 and 300 K are observed. They correspond to trap levels with a thermal activation energy of 0.03 - 0.06 eV, 0.13 - 0.18 eV and 0.6 - 0.65 eV.

Paper Details

Date Published: 8 April 1999
PDF: 6 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344723
Show Author Affiliations
Waclaw Bala, Nicholas Copernicus Univ. (Poland)
Franciszek Rozploch, Nicholas Copernicus Univ. (Poland)
L. Falkowski, Nicholas Copernicus Univ. (Poland)
Slawomir Kulesza, Nicholas Copernicus Univ. (Poland)
G. Zabik, Nicholas Copernicus Univ. (Poland)
S. Plachetko, Nicholas Copernicus Univ. (Poland)
P. Borowski, Nicholas Copernicus Univ. (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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