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Proceedings Paper

High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates
Author(s): Manijeh Razeghi; Patrick Kung; Danielle Walker; Melissa Hamilton; Jacqueline E. Diaz
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Paper Abstract

We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.

Paper Details

Date Published: 8 April 1999
PDF: 7 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344718
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Melissa Hamilton, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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