Share Email Print
cover

Proceedings Paper

Time-resolved study of luminescence properties of porous silicon in micro- and nanosecond range
Author(s): Zbigniew Lukasiak; Zbigniew Wyrzykowski; Jaroslaw Sylwisty; Waclaw Bala
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photoluminescence time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range at different temperatures (10 K-room) on anodically etched boron-doped silicon are presented. PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. PL-DC have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed model in which the multibarrier structure is formed by Si crystal (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344715
Show Author Affiliations
Zbigniew Lukasiak, Nicholas Copernicus Univ. (Poland)
Zbigniew Wyrzykowski, Nicholas Copernicus Univ. (Poland)
Jaroslaw Sylwisty, Nicholas Copernicus Univ. (Poland)
Waclaw Bala, Nicholas Copernicus Univ. (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

© SPIE. Terms of Use
Back to Top