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Proceedings Paper

Beryllium doping in Al0.5Ga0.5As MBE layers
Author(s): Jan Szatkowski; Ewa Placzek-Popko; K. Sieranski; Ole Per Hansen
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Paper Abstract

P-type ternary semiconducting compound AlGaAs has been used as an active element in many semiconducting devices since the application of the molecular beam epitaxy (MBE) technique to grow the material. Beryllium is usually used as an effective mass acceptor dopant in the MBE grown AlGaAs. However there were some reports on possible Be related deep centers especially in higher aluminum contents. In present paper we report on deep levels found with the help of DLTS method in Be doped p type MBE grown Al0.5Ga0.5As. The aim of our studies presented in this paper was an attempt to find relationship between amount of incorporated Be and properties of deep levels observed in the material. For this purpose two types of samples with different Be concentrations (2 X 1017 cm-3 and 1 X 1016 cm-3). In both types of samples seven hole traps, labelled by us H0-H6, were detected by DLTS measurements. For H1-H4 traps the heights of corresponding DLTS signal peak decrease with decreasing Be amount what means that their concentrations follow the concentration of incorporated Be. Therefore these traps may be related to Be. The trap H5 may be oxygen-related.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344710
Show Author Affiliations
Jan Szatkowski, Wroclaw Univ. of Technology (Poland)
Ewa Placzek-Popko, Wroclaw Univ. of Technology (Poland)
K. Sieranski, Wroclaw Univ. of Technology (Poland)
Ole Per Hansen, Univ. of Copenhagen (Denmark)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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