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Proceedings Paper

Temperature dependence of energy bandgap of Zn1-xMgxSe strained epitaxial layers grown on GaAs
Author(s): Adam Gapinski; Waclaw Bala
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Paper Abstract

Using non-destructive optical methods we determined the bandgap energies for strained epitaxial layers of Zn1-xMgxSe on GaAs. Molecular beam epitaxy method for growing the samples with different magnesium concentrations has been used. We compared experimental results with equation based on the Hill's theory, which describes the theoretical bandgap changes with composition z for ternary alloy. The nonlinear dependence of energy bandgap on composition is expressed by bowing parameter. The temperature dependence of bandgap energy in the range from 10 K up to the room temperature was also investigated. Semiempirical Varshni's formula to describe this dependence has been used.

Paper Details

Date Published: 8 April 1999
PDF: 4 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344709
Show Author Affiliations
Adam Gapinski, Nicholas Copernicus Univ. (Poland)
Waclaw Bala, Nicholas Copernicus Univ. (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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