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Proceedings Paper

High-throughput optoelectronic interconnect for holographic memory devices
Author(s): Bipin Bihari; Jinghuai Fa; Xuegong Deng; Brian M. Davies; Suning Tang; Ray T. Chen
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Paper Abstract

Novel optical memory systems offer ultra large storage capacity and with fast access time. The current commercial system can produce in access of 300 Mb/s aggregate data rate and near future system will yield aggregate data rates on the order of 1-10 Gb/s. However, full exploitation of this feature is possible only if memory to processor interface is fast enough to handle such a data rate. In this presentation, a unique optoelectronic interconnect architecture based on WDM and WDDM are described.

Paper Details

Date Published: 13 April 1999
PDF: 12 pages
Proc. SPIE 3632, Optoelectronic Interconnects VI, (13 April 1999); doi: 10.1117/12.344618
Show Author Affiliations
Bipin Bihari, Univ. of Texas/Austin (United States)
Jinghuai Fa, Univ. of Texas/Austin (United States)
Xuegong Deng, Univ. of Texas/Austin (United States)
Brian M. Davies, Radiant Research, Inc. (United States)
Suning Tang, Radiant Research, Inc. (United States)
Ray T. Chen, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3632:
Optoelectronic Interconnects VI
Julian P. G. Bristow; Suning Tang, Editor(s)

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