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Proceedings Paper

UV Schottky-barrier detector development for possible Air Force applications
Author(s): Gary A. Smith; Michael J. Estes; Joseph E. Van Nostrand; Tuoc Dang; P. J. Schreiber; Henryk Temkin; J. Hoelscher
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Paper Abstract

This paper discusses the collaborative optical and electrical characterization of the first photovoltaic (PV) III-nitride based detectors grown and fabricated by the Air Force Research Laboratory (AFRL). These 2.6 micrometer thick, n-type GaN Schottky detector structures doped with Si were grown by molecular beam epitaxy (MBE) on (0001)-oriented sapphire substrates, and incorporated palladium (Pd) as the Schottky metal contact. Working Schottky-barrier detector sizes ranged from 50 micrometer to 1600 micrometer in diameter. Flood- illuminated spectral responsivities of these Schottky detectors were as high as 0.12 A/W (for a 1600 micrometer diameter device biased at -1.5 V) at a peak wavelength of 273 nm. The typical measured frequency response of these detectors was flat from dc to the chopper limit of 700 Hz, and the 1/e response time of a 1600 micrometer diameter Schottky- barrier GaN detector was found to be as low as 50 microsecond(s) at zero bias. Noise characterization of these detectors was also performed, and noise equivalent powers (NEPs) of sample GaN Schottky-barrier detectors are reported.

Paper Details

Date Published: 7 April 1999
PDF: 9 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344588
Show Author Affiliations
Gary A. Smith, Air Force Research Lab. (United States)
Michael J. Estes, Air Force Research Lab. (United States)
Joseph E. Van Nostrand, Air Force Research Lab. (United States)
Tuoc Dang, Air Force Research Lab. (United States)
P. J. Schreiber, Air Force Research Lab. (United States)
Henryk Temkin, Texas Tech Univ. (United States)
J. Hoelscher, Wright State Univ. (United States)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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