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Proceedings Paper

Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth
Author(s): Patrick Kung; Danielle Walker; Peter M. Sandvik; Melissa Hamilton; Jacqueline E. Diaz; Il Hwan Lee; Manijeh Razeghi
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Paper Abstract

We report the growth and characterization of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiOx mask stripes.

Paper Details

Date Published: 7 April 1999
PDF: 7 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344586
Show Author Affiliations
Patrick Kung, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Peter M. Sandvik, Northwestern Univ. (United States)
Melissa Hamilton, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Il Hwan Lee, Northwestern Univ. (South Korea)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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