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Proceedings Paper

HgCdTe photodiode passivated with a wide-bandgap epitaxial layer
Author(s): Jaroslaw Rutkowski; Antoni Rogalski; Krzysztof Adamiec
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Paper Abstract

The surface passivation is essential for the fabrication of high performance HgCdTe photodiodes, especially for photodiodes with small junction area. The fabrication of the HgCdTe photodiodes passivated with a wide band gap epitaxial layer has been described. The planar double-layer heterojunction (DLHJ) structures used in fabrication Hg1- xCdxTe photodiodes were grown on CdZnTe substrates by liquid phase epitaxy (LPE). The P+-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe DLHJ structures. To improve the photodiode performance a thickness of n-type base layer was limited. The photodiodes performances were determined from measurements of the current-voltage and spectral response characteristics. The generation- recombination current was found to be dominant current around zero bias voltage at 77 K. The diodes without antireflection coating had a typical quantum efficiency of 60 percent. The performance of both type of p-n LWIR HgCdTe photodiodes (with and without the wide band gap epitaxial layer) have been compared.

Paper Details

Date Published: 7 April 1999
PDF: 8 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344580
Show Author Affiliations
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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