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Proceedings Paper

Photoreflection spectrum on Si-surface-delta-doped GaAs
Author(s): Wei Lu; Xingquan Liu; Xiaoshuang Chen; Guo Liang Shi; Yimin Qiao; Shuechu Shen; Ying Fu; Magnus Willander
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Paper Abstract

In this paper we present the observation of the interband transition in the GaAs (100) surface Si-delta-doping potential. Samples with different surface doping concentrations (Ns equals undoped, 3.0 X 1012, 6.3 X 1013, 2.4 X 1014 and 3.6 X 104 cm-2) have been studied at room temperature in the MBE high vacuum chamber using modulated photo-reflection (PR) spectroscopy technique. The MBE chamber guarantees that all the sample surfaces are free of oxidation or uncontrollable contamination. The optical transition of at GaAs bandedge around 1.41 eV is strong and is almost independent of Ns. A relatively weak feature above 1.42 eV has been observed which is clearly enhanced and blue-shifted following the increase of Ns. The experimental results have been analyzed and well explained based on the self-consistent Schrodinger-Poisson equations. The theoretical analysis indicates that it is not proper to attribute the PR spectral peak of 1.42 eV simply to be certain subband-related optical transition. The observed spectral peak of 1.42 eV is more likely to be related to the high-index confined-levels in the half-V-shape conduction band at the sample surface.

Paper Details

Date Published: 7 April 1999
PDF: 6 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344579
Show Author Affiliations
Wei Lu, Shanghai Institute of Technical Physics (China)
Xingquan Liu, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Guo Liang Shi, Shanghai Institute of Technical Physics (China)
Yimin Qiao, Shanghai Institute of Technical Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)
Ying Fu, Univ. of Goeteborg and Chalmers Univ. of Technology (Sweden)
Magnus Willander, Univ. of Goeteborg and Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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