Share Email Print
cover

Proceedings Paper

MOVPE growth of HgCdTe for bandgap engineered IR detector arrays
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Recent advances in metalorganic vapor phase epitaxy (MOVPE) of HgCdTe are reviewed that have impacted in situ growth of bandgap engineered IR detector devices. MOVPE can now be readily used to grow multilayer HgCdTe structures with complete flexibility in iodine donor and arsenic acceptor doping and tight control of alloy composition. 100% activation of both donor and acceptor dopants has been achieved and the mobilities and lifetimes of HgCdTe grown on lattice-matched CdZnTe are comparable to the best values achieved in HgCdTe by any epitaxial growth technique. The defects measured by etch pit density counts in multilayer structures with n-type and p- type regions are reported. Single-band IR detector device results are reported that have been grown in situ, for operation in the long wavelength (LW, 8 - 12 micrometer) and medium wavelength (MW, 3 - 5 micrometer) IR spectral bands. Their material characteristics and detector performances are reviewed and compared with theoretical modeling results.

Paper Details

Date Published: 7 April 1999
PDF: 10 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344578
Show Author Affiliations
Pradip Mitra, Lockheed Martin Vought Systems (United States)
Marion B. Reine, Lockheed Martin IR Imaging Systems (United States)


Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top