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Proceedings Paper

NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector
Author(s): Serguei Jourba; Marie-Paule Besland; Michel Gendry; Michel Garrigues; Jean Louis Leclercq; Pedro Rojo-Romeo; Pierre Viktorovitch; Sebastein Cortial; Xavier Hugon; Christophe Pautet
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Paper Abstract

We demonstrate NIR (1.8 micrometer - 2.3 micrometer) resonant photo-detectors based on inter-band (Ecl- Ehhl) absorption in strain compensated, indium rich, InGaAs quantum wells (QW). Extremely low room temperature dark current densities are achieved by reduction of the active layer thickness combined with low defect density of the pseudomorphic strain compensated QWs. The weak absorption of the QW is enhanced by embedding the quantum well into a vertical resonant cavity. We present the experimental results for a demonstrator designed for a wavelength of 2 micrometer. The device, based on a single In0.83Ga0.17As quantum well and tensile strained barriers for strain compensation, exhibits a selectivity of 9 nm and 18% quantum efficiency. InP/InGaAs and Si/SiO2 material systems are used for the bottom and top distributed Bragg reflectors (DBR) of the cavity, with 20 pairs and 2 pairs respectively. The semiconductor structure is grown by MOCVD. The top Si/SiO2 DBR is deposited after fabrication of p-i-n planar photodiodes. Typical dark current densities are lower than 10-7 A/cm2 at -2 V bias. Conditions for extension of the operating wavelength up to 2.3 micrometer have been obtained experimentally using InAs/GaAs superlattice deposition to increase the thickness of the strained QW. A prospective tunable detector based on an actuable micro-machined air cavity and air/InP bottom DBR is proposed.

Paper Details

Date Published: 7 April 1999
PDF: 12 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344568
Show Author Affiliations
Serguei Jourba, Ecole Centrale de Lyon (France)
Marie-Paule Besland, Ecole Centrale de Lyon (France)
Michel Gendry, Ecole Centrale de Lyon (France)
Michel Garrigues, Ecole Centrale de Lyon (France)
Jean Louis Leclercq, Ecole Centrale de Lyon (France)
Pedro Rojo-Romeo, Ecole Centrale de Lyon (France)
Pierre Viktorovitch, Ecole Centrale de Lyon (France)
Sebastein Cortial, Thomson-CSF (France)
Xavier Hugon, Thomson-CSF (France)
Christophe Pautet, Thomson-CSF (France)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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