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Proceedings Paper

AlxGa1-xN p-i-n photodiodes on sapphire substrates
Author(s): Danielle Walker; Patrick Kung; Peter M. Sandvik; Jia-Jiun Wu; Melissa Hamilton; Il Hwan Lee; Jacqueline E. Diaz; Manijeh Razeghi
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Paper Abstract

We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05 less than or equal to X less than or equal to 0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non- exponential, with a decay time longer than the RC constant.

Paper Details

Date Published: 7 April 1999
PDF: 6 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344556
Show Author Affiliations
Danielle Walker, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Peter M. Sandvik, Northwestern Univ. (United States)
Jia-Jiun Wu, Northwestern Univ. (United States)
Melissa Hamilton, Northwestern Univ. (United States)
Il Hwan Lee, Northwestern Univ. (South Korea)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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