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Proceedings Paper

Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing
Author(s): Xingquan Liu; Wei Lu; Xiaoshuang Chen; Shuechu Shen; Hui Z. Wang; Fuli Zhao; Xiguang Zheng; Ying Fu; Magnus Willander
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Paper Abstract

In this letter, self-aligned dual implantation technique was successfully used to speed up the carrier transportation from sidewall quantum well (SQWL) to quantum wire (QWR) region in V-groove AlGaAs/GaAs QWR structure. Photoluminescence (PL) and time resolved photoluminescence (TRPL) show that the lateral confinement was enhanced after intermixing by intermixing the necking region. Lifetime was obviously enlonged after selective intermixing, which comes from the enhanced lateral carrier confinement. Strong hot exciton relaxation process in QWRs region is observed after selective intermixing.

Paper Details

Date Published: 7 April 1999
PDF: 9 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344554
Show Author Affiliations
Xingquan Liu, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Shuechu Shen, Shanghai Institute of Technical Physics (China)
Hui Z. Wang, Zhongshan Univ. (China)
Fuli Zhao, Zhongshan Univ. (China)
Xiguang Zheng, Zhongshan Univ. (China)
Ying Fu, Univ. of Goteborg and Chalmers Univ. of Technology (Sweden)
Magnus Willander, Univ. of Goteborg and Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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