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Proceedings Paper

Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode
Author(s): Emmanuel Dupont; Hui C. Liu; Margaret Buchanan; Zbigniew R. Wasilewski; Daniel St-Germain; Paul C. Chevrette
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Paper Abstract

This paper presents the recent developments of large area focal plane 'pseudo' arrays for infrared (IR) imaging. The devices (called QWIP-LED) are based on the epitaxial integration of an n-type mid-IR (8 - 10 micrometer in the present study) GaAs/AlGaAs quantum well detector with light emitting diode. The originality of this work is to use n-type quantum wells for large detection responsivity. From these structures, very large area (approximately equals cm2) mesas are processed with V-grooves to couple the mid-IR light with the QW intersubband transitions. The increase of spontaneous emission by the mid-infrared induced photocurrent is detected with a CCD camera in the reflection configuration. As demonstrated earlier on p-type QWIP structures the mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion.

Paper Details

Date Published: 7 April 1999
PDF: 8 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344553
Show Author Affiliations
Emmanuel Dupont, National Research Council Canada (Canada)
Hui C. Liu, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)
Zbigniew R. Wasilewski, National Research Council Canada (Canada)
Daniel St-Germain, Defence Research Establishment Valcartier (Canada)
Paul C. Chevrette, Defence Research Establishment Valcartier (Canada)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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