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Proceedings Paper

Highly reliable 40-W cw InGaAlAs/GaAs 808-nm laser bars
Author(s): Christian Hanke; Lutz Korte; Bruno D. Acklin; Johann Luft; Stefan Groetsch; Gerhard Herrmann; Zeljko Spika; Marcel Marchiano; Bernhard DeOdorico; Jens Wilhelmi
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Paper Abstract

The fundamental question whether aluminum-free semiconductor lasers in the 808 nm band are significantly more reliable than Al-containing lasers is still open. We have fabricated and tested high-power InGaAlAs/GaAs-lasers which show excellent reliability data at and above 40 W cw. The laser structure consists of an InGaAlAs-double-quantum well (DQW) as active layer embedded in a large optical cavity (LOC) waveguide structure. The layers were grown in a low pressure MOVPE (LP- MOVPE) reactor using high quality precursors. Asymmetrically coated bars with a width of 1 cm containing 25 groups of 200 micrometer wide emitters were mounted junction down on actively cooled heatsinks. At a heatsink temperature of 18 degrees Celsius the slope-efficiency is 1.1 - 1.2 W/A. Due to the low series-resistance of 2.2 m(Omega) and the low internal losses in the range of 1.7 cm-1 the overall efficiency at 40 W cw reaches 50%. Lifetime studies over 33 0000 h accumulated device hours show that the laser bars with a resonator length of 900 micrometer can be operated at 40 W with high reliability. The mean degradation rate is -0.11%/kh. This result emphasizes that Al-containing lasers can also have a very high reliability usually claimed for Al-free lasers. As a consequence of these encouraging results we will start further lifetime tests at 50 to 60 W.

Paper Details

Date Published: 1 April 1999
PDF: 7 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344547
Show Author Affiliations
Christian Hanke, Siemens AG (Germany)
Lutz Korte, Siemens AG (Germany)
Bruno D. Acklin, Osram Opto Semiconductors (Germany)
Johann Luft, Osram Opto Semiconductors (Germany)
Stefan Groetsch, Osram Opto Semiconductors (Germany)
Gerhard Herrmann, Osram Opto Semiconductors (Germany)
Zeljko Spika, Osram Opto Semiconductors (Germany)
Marcel Marchiano, Dilas Diodenlaser GmbH (Germany)
Bernhard DeOdorico, Dilas Diodenlaser GmbH (Germany)
Jens Wilhelmi, Dilas Diodenlaser GmbH (Germany)


Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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