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Proceedings Paper

Comparison of mid-infrared laser diode active regions
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Paper Abstract

The development of mid-infrared interband diode lasers has been hindered by factors such as Auger recombination and intervalence band absorption, which become increasingly important at longer wavelengths. A number of structures have been proposed in which the effects of these processes are reduced. The maximum gain per unit volumetric current density can be used as a figure of merit for comparing different active region materials. Using this figure of merit, we compare a series of structures with band gaps near 0.3 eV (i.e., wavelengths near 4 microns). The figure of merit is obtained from gain spectra calculated using superlattice K(DOT)p theory and a combination of calculated and measured recombination rates. We show that devices based on active regions incorporating type-I InAsSb/AlInAsSb or InAsSb/InAsP quantum wells should have room temperature threshold currents 7 - 13 times smaller than those of devices based on bulk InAs. However, devices using type-II superlattice active regions should have room temperature threshold currents that are a factor of 3 - 4 times smaller than those of the type-I quantum wells. The figure of merit can also be used to determine the optimal thickness of the active region as a function of waveguide loss and optical mode width.

Paper Details

Date Published: 1 April 1999
PDF: 8 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344541
Show Author Affiliations
Jonathon T. Olesberg, Univ. of Iowa (United States)
Michael E. Flatte, Univ. of Iowa (United States)
Bennett J. Brown, Univ. of Iowa (United States)
Tom C. Hasenberg, Univ. of Iowa (United States)
Scott A. Anson, Univ. of Iowa (United States)
Thomas F. Boggess, Univ. of Iowa (United States)
Christoph H. Grein, Univ. of Illinois/Chicago (United States)


Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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