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Proceedings Paper

High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy
Author(s): Seppo Orsila; Mika Toivonen; Pekka Savolainen; Ville Vilokkinen; Petri Melanen; Markus Pessa; Mika J. Saarinen; Petteri Uusimaa; Pat Corvini; Fang Fang; Mitch Jansen; Rashit F. Nabiev
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Paper Abstract

This paper presents the performance characteristics and reliability data of AlGaInP-based VISIBLE laser diodes emitting at the wavelengths from 630 to 670 nm. The lasers are grown by toxic gas free solid source molecular beam epitaxy.

Paper Details

Date Published: 1 April 1999
PDF: 6 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344531
Show Author Affiliations
Seppo Orsila, Tampere Univ. of Technology (Finland)
Mika Toivonen, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
Ville Vilokkinen, Tampere Univ. of Technology (Finland)
Petri Melanen, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)
Mika J. Saarinen, Nordic Epitaxy (Finland)
Petteri Uusimaa, Nordic Epitaxy (Finland)
Pat Corvini, Coherent Semiconductor Group (United States)
Fang Fang, Coherent Semiconductor Group (United States)
Mitch Jansen, Coherent Semiconductor Group (United States)
Rashit F. Nabiev, Coherent Semiconductor Group (United States)

Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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