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Proceedings Paper

InGaN/GaN MQW SCH lasers grown on SiC
Author(s): Gary E. Bulman; Kathy Doverspike; Kevin W. Haberern; Heidi Dieringer; Hua-Shuang Kong; John A. Edmond; Y. K. Song; M. Kuball; Arto V. Nurmikko
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Paper Abstract

Laser diode structures were fabricated by metal-organic chemical vapor deposition (MOCVD) from the AlN-InN-GaN system on single crystal 6H-SiC substrates. An AlGaN conducting buffer layer was developed for these devices, which provides a vertical conduction path between SiC substrate and the active device region. Violet and blue multiple quantum well (MQW) separate confinement heterojunction (SCH) LDs were fabricated having InGaN wells and GaN barriers. The lowest pulsed operation room temperature threshold current density obtained for lasing was 7.1 kA/cm2 in a 4-well structure. Lasing has also been obtained in these same devices at duty cycles up to 75%.

Paper Details

Date Published: 1 April 1999
PDF: 6 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344527
Show Author Affiliations
Gary E. Bulman, Cree Research, Inc. (United States)
Kathy Doverspike, Cree Research, Inc. (United States)
Kevin W. Haberern, Cree Research, Inc. (United States)
Heidi Dieringer, Cree Research, Inc. (United States)
Hua-Shuang Kong, Cree Research, Inc. (United States)
John A. Edmond, Cree Research, Inc. (United States)
Y. K. Song, Brown Univ. (United States)
M. Kuball, Brown Univ. (United States)
Arto V. Nurmikko, Brown Univ. (United States)


Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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