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Proceedings Paper

Multiple-wavelength lasers defined by stripe width using one-step impurity-free quantum well intermixing technique
Author(s): Won Jun Choi; Erik J. Skogen; Jin K. Kim; Ryan L. Naone; Larry A. Coldren
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Paper Abstract

Impurity free intermixing of In0.22Ga0.78As/GaAs quantum wells in a semiconductor laser has been carried out by rapid thermal annealing various width ridges capped with SiNx film. We have observed greater blue-shifting of the lasing wavelength for wider ridge lasers, caused by greater degree of quantum well intermixing. This dependence of quantum well intermixing on the ridge width has been explained by the redistribution of stress fields created by the SiNx capping film on the patterned structure.

Paper Details

Date Published: 1 April 1999
PDF: 8 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344523
Show Author Affiliations
Won Jun Choi, Univ. of California/Santa Barbara and Korea Institute of Science and Technology (South Korea)
Erik J. Skogen, Univ. of California/Santa Barbara (United States)
Jin K. Kim, Univ. of California/Santa Barbara (United States)
Ryan L. Naone, Univ. of California/Santa Barbara (United States)
Larry A. Coldren, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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