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Proceedings Paper

Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
Author(s): Jose M. M. M. de Almeida; Antonio M. P. P. Leite; Jaymin Amin
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Paper Abstract

An investigation on optical amplification in Ti waveguides in LiNbO3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNbO3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.

Paper Details

Date Published: 1 April 1999
PDF: 8 pages
Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); doi: 10.1117/12.344505
Show Author Affiliations
Jose M. M. M. de Almeida, Univ. do Porto (Portugal)
Antonio M. P. P. Leite, Univ. do Porto (Portugal)
Jaymin Amin, Corning Inc. (United States)


Published in SPIE Proceedings Vol. 3622:
Rare-Earth-Doped Materials and Devices III
Shibin Jiang; Seppo Honkanen, Editor(s)

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