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Proceedings Paper

1.55-um Er-doped GaN LED
Author(s): Hongen Shen; Jagadeesh Pamulapati; Monica Alba Taysing-Lara; M. C. Wood; Richard T. Lareau; Matthew H. Ervin; John Devin Mackenzie; Fan Ren; Corinne R. Abernathy; John M. Zavada
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Paper Abstract

Erbium (Er) doped semiconductors are of interest for light- emitting device applications operating at around 1.55 micrometers and for the potential integration with other semiconductor devices. However, the optical emission of Er3+ ions in semiconductors has not been as efficient as in dielectric materials, particularly at room temperature. This may be because ionic bonds, which are characteristic of dielectrics, are better suited for forming the required Er3+ energy levels than are covalent bonds, which are present in most III-V semiconductors. In this paper, we report 1.55 micrometers emission from an Er-doped GaN LED. We also discuss effect of the measurement temperature on the emission spectrum as well as the effect of sample annealing on the emission spectrum.

Paper Details

Date Published: 1 April 1999
PDF: 5 pages
Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); doi: 10.1117/12.344498
Show Author Affiliations
Hongen Shen, U.S. Army Research Lab. (United States)
Jagadeesh Pamulapati, U.S. Army Research Lab. (United States)
Monica Alba Taysing-Lara, U.S. Army Research Lab. (United States)
M. C. Wood, U.S. Army Research Lab. (United States)
Richard T. Lareau, U.S. Army Research Lab. (United States)
Matthew H. Ervin, U.S. Army Research Lab. (United States)
John Devin Mackenzie, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
Corinne R. Abernathy, Univ. of Florida (United States)
John M. Zavada, U.S. Army Research Office (United States)


Published in SPIE Proceedings Vol. 3622:
Rare-Earth-Doped Materials and Devices III
Shibin Jiang; Seppo Honkanen, Editor(s)

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