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Proceedings Paper

Luminescent properties of Er-doped BaTiO3 thin films for optical waveguides
Author(s): Gregory M. Ford; Andrew Teren; Bruce W. Wessels
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Paper Abstract

Erbium doped BaTiO3 thin films for optical waveguide applications were investigated. Characteristic 4f emission at 1560 nm is observed for Er concentrations ranging from 1018 to 1020 cm-3. Factors which determined the luminescence efficiency were investigated and a model for efficiency was developed. The luminescence intensity depended predominantly upon two factors: the concentration of radiative Er centers and the de-excitation efficiency of the excited 4f electron state. At a growth temperature of 725 degree(s)C, the concentration of radiative Er ions was independent of Er dopant concentration. Annealing the thin films in an oxidizing ambient resulted in increased luminescence efficiency whereas annealing under reducing conditions quenched the luminescence.

Paper Details

Date Published: 1 April 1999
PDF: 6 pages
Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); doi: 10.1117/12.344497
Show Author Affiliations
Gregory M. Ford, Northwestern Univ. (United States)
Andrew Teren, Northwestern Univ. (United States)
Bruce W. Wessels, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3622:
Rare-Earth-Doped Materials and Devices III
Shibin Jiang; Seppo Honkanen, Editor(s)

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