Share Email Print
cover

Proceedings Paper

Gallium-nitride-based LEDs on silicon substrates
Author(s): Nestor A. Bojarczuk; Supratik Guha
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We describe the growth and characteristics of GaN based light emitting diodes grown on Si(111) substrates. We show that the UV electroluminescence of such diodes can be used to generate fluorescence in organic color converters so that multicolored hybrid nitride-organic light emitting diodes that emit in the visible can be prepared.

Paper Details

Date Published: 14 April 1999
PDF: 6 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344486
Show Author Affiliations
Nestor A. Bojarczuk, IBM Thomas J. Watson Research Ctr. (United States)
Supratik Guha, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

© SPIE. Terms of Use
Back to Top