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Proceedings Paper

InGaN blue light-emitting diodes with optimized n-GaN layer
Author(s): Ivan Eliashevich; Yuxin Li; Andrei Osinsky; Chuong A. Tran; Michael G. Brown; Robert F. Karlicek Jr.
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Paper Abstract

In the extensive research dedicated recently to metal- organic chemical vapor deposition (MOCVD)-grown high- efficiency GaN LED device design, a significant effort has been made to increase the conductivity of p-GaN layers, while n-GaN layers received relatively little attention. We demonstrated, both experimentally and theoretically, that the resistivity of n-GaN layers has a profound effect on blue InGaN LED performance. Optimization of n-GaN epitaxial layers allows the achievement of device series resistances below 15 Ohms and forward voltages as low as 2.9 Volts at 20 mA. We have also shown that contactless measurements of sheet resistivity of the entire LED epitaxial structure closely correlate with the ohmic resistance of the GaN layer measured in the fabricated devices. This provides an excellent non-destructive characterization tool for n-GaN optimization. Insufficient n-GaN conductivity is shown to trigger a distinct degradation mechanism by initiating current crowding in a localized device area. InGaN LED lamps with optimized n-GaN layers had a high external quantum efficiency and a good long-term reliability.

Paper Details

Date Published: 14 April 1999
PDF: 9 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344483
Show Author Affiliations
Ivan Eliashevich, Emcore Corp. (United States)
Yuxin Li, Emcore Corp. (United States)
Andrei Osinsky, Emcore Corp. (United States)
Chuong A. Tran, Emcore Corp. (United States)
Michael G. Brown, Emcore Corp. (United States)
Robert F. Karlicek Jr., Emcore Corp. (United States)


Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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