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Proceedings Paper

Uniformity of GaInAsP/GaInAsP multiquantum well structures grown in multiwafer reactors
Author(s): Markus Deufel; Michael Heuken; Rainer Beccard; Holger Juergensen; Egbert Woelk
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Paper Abstract

The increasing demand for sophisticated laser devices for high speed telecommunication systems, CATV, multimedia or printing markets requires the application of multiwafer MOVPE systems. To meet the targets of these markets, the Planetary ReactorTM as well proven production tool was used to fabricate InGaAsP single and multilayer test structures with outstanding uniformity.

Paper Details

Date Published: 14 April 1999
PDF: 9 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344476
Show Author Affiliations
Markus Deufel, AIXTRON AG (Germany)
Michael Heuken, RWTH Aachen Inst fuer Halbeitertechnik (Germany)
Rainer Beccard, AIXTRON AG (Germany)
Holger Juergensen, AIXTRON AG (Germany)
Egbert Woelk, AIXTRON Inc. (United States)

Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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