Share Email Print
cover

Proceedings Paper

High-efficiency top-emitting microcavity light-emitting diodes
Author(s): P. Royo; Jean-Francois Carlin; J. Spicher; Ross P. Stanley; Romuald Houdre; Veronique Bardinal; Ursula Oesterle; Marc Ilegems
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers were grown using molecular beam epitaxy on GaAs substrates. They consist of a 3-period Be- doped distributed Bragg reflector (DBR) centered at 950 nm wavelength, a cavity containing three InGaAs quantum wells and a 15-periods Si-doped DBR. Different values for the wavelength detuning between spontaneous emission line and Fabry-Perot cavity mode were explored, between -40 nm and +10 nm. Devices sizes ranged from 420 X 420 micrometers 2 to 22 X 22 micrometers 2. As expected from simulations, the higher efficiencies are obtained when the detuning is in the -20 to 0 nm range. The devices exhibit then up to 10% external quantum efficiency, measured for a 62 degree(s) collection half-angle. After correction for the surface shadowing due to the grid p-contact, the efficiency increases to 14% and is practically independent of device size.

Paper Details

Date Published: 14 April 1999
PDF: 9 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344474
Show Author Affiliations
P. Royo, Ecole Polytechnique Federale de Lausanne (United States)
Jean-Francois Carlin, Ecole Polytechnique Federale de Lausanne (Switzerland)
J. Spicher, Ecole Polytechnique Federale de Lausanne (Switzerland)
Ross P. Stanley, Ecole Polytechnique Federale de Lausanne (Switzerland)
Romuald Houdre, Ecole Polytechnique Federale de Lausanne (Switzerland)
Veronique Bardinal, LAAS/CNRS (France)
Ursula Oesterle, Ecole Polytechnique Federale de Lausanne (Switzerland)
Marc Ilegems, Ecole Polytechnique Federale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

© SPIE. Terms of Use
Back to Top